GE / IP FANUC Series 90/30 In Stock
GE ST2318 RSTi output module 8 points, Negative Logic, 24VDC/ 0.5A GE-IP
The ST-2318 transistor is an N-Channel logic enhancement module power transistor with high-cell density. The technology behind this transistor is a DMOS trench that contains source, gate, body, and drain parts that are tailor-made to work in parallel to reduce the on-state resistance. The ST-2318 transistor is best suited for low-voltage applications, such as applications in small computers and cellular phones. Additionally, low in-line power is required for the ST-2318 transistor to operate properly. The continuous drain current rating is 3 Amps when the temperature is 70 Degrees Celsius and it is 4 Amps when the temperature is at 25 degrees Celsius. The on and off duty cycle that is specified as the pulsed drain current is rated at 10 Amps while its power dissipation is 1.25 Watts at temperatures of 25 degrees Celsius and the power dissipation is 0.8 Watts at temperatures of 70 degrees Celsius.
The minimum gate to source voltage required by ST-2318 enhancement module power transistor to conduct the path between the drain terminal and the source is 0.5 Volts and this is scalable to allow for factor power efficiency. The forward voltage for the diode that regulates the temperature changes for this device is 0.8 Volts minimum and it can reach 1.2 Volts maximum. The time required by the N-Channel Logic module to turn on, also referred to as the turn-on time, is 10 nanoseconds at 15 Volts, and it is 12 nanoseconds at 10 Volts and a resistance of RL=15 Ohms. To switch the Logic module off, the time required to turn it off is 8 nanoseconds with the following conditions: VDD=15 Volts, RL=15 Ohms, ID=1.0 Amp, VGEN=10 Volts, and RG=6 Ohms.
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